Updated: Fri, 10/11/2024 - 12:00

Campus/building access, classes and work will return to usual conditions, as of Saturday, Oct. 12. See Campus Public Safety website for details.


Accès au campus et aux immeubles, cours et modalités de travail : retour à la normale à compter du samedi 12 octobre. Complément d’information : Direction de la protection et de la prévention.

Booking XPS or XRD

Booking other characterization equipment

  • SEM 
  • Ellipsometer
  • Optical Profiler 
  • Optical Microscope
  • Reflectometer
  • Profilometer 
  • Stress Measurement 

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Characterization Equipment

XPS

X-ray Photoelectron Spectroscopy (XPS): Thermo Fisher-Scientific Nexsa G2

Nexsa G2 instrument picture

Specifications:

  • X-ray source: Al Kα micro-focused monochromator; spot size (10-400 μm)
  • Analyzer: 180° double focusing hemispherical analyzer; 128-channel detector
  • Charge compensation: dual beam source; ultra-low energy electron beam
  • MAGCIS ion gun: monatomic mode: 500eV – 4keV; cluster mode: 2keV – 8keV, atom size: 75 – 2000
  • Sample handling: 60×60mm sample area; 20mm maximum sample thickness
  • Data system: Avantage data system

Applications:

  • Surface characterization for a variety of solid materials: metals, oxides, polymers, semiconductors, microelectronics, nano and bio-materials
  • No special preparation required for powders, fibers, coatings, films, bulk materials
  • Element identification with the detection limit of 0.05%
  • Chemical state (bond) analysis with high resolution scanning
  • Depth profile performed either with monoatomic or cluster ion Ar gun
  • Integrated analysis options:
    1. Ultraviolet photoelectron spectroscopy (UPS)
      • Investigation of valence band and highest molecular orbitals (occupied bonding states)
      • Work function measurements of materials
    2. Ion scattering spectroscopy (ISS)
      • Elemental composition (except H) of the 1st atomic layer of a surface
    3. Reflection electron energy loss spectroscopy (REELS)
      • Relative energy levels of unoccupied States.
      • Band gap determination for semiconductor materials.
      • Comparison of relative hydrogen content in polymer materials.
      • Investigation of conjugation or aromaticity in organic materials.
      • Determination of sp2 / sp3 hybridisation of carbon
  • Rapid XPS imaging
  • Tilt module for angle resolved XPS (ARXPS)

XRD 2

Bruker X-ray Diffraction (XRD) Analysis: D8 DISCOVER

Bruker D8 Discover Picture

Specifications:

  • High-performance Cu X-ray sources
  • X-ray Optics: monochromatic
  • Goniometer and Sample Stage: XYZ, 1/4-Cradle
  • Sample Alignment and Monitor: Optical/video microscope, laser/video
  • 2D Detector: VANTEC-2000, the largest 2Theta and Gamma coverage

Applications:

  • Enables detailed analysis of any crystalline materials from fundamental research
  • Phase identification (Qualitative / Quantitative Analysis)
  • Crystal structure determination / Crystalline percentage
  • Grazing Incident X-Ray Diffraction (GIXRD)
  • Various solid materials in the forms of powder, bulk and film samples

 

Confocal Raman/fluorescence microscope

Bruker Senterra Confocal Raman Microscope

Bruker Senterra Confocal Raman Picture

Specifications:

  • System: Bruker Senterra Dispersive Raman
  • Detector Model: DU420A-OE-152
  • Lasers: 785, 633 and 532 nm
  • Microscope: Olympus BX51M System Metallurgical Microscope with halogen light source
  • Software: OPUS 6.5.97; DSD 6.5.92.7101

Applications:

  • Analyzes a vast range of samples, including biological samples.
  • A special hardware feature removes fluorescence background at 785 nm.
  • Sample maps with ~1 micron resolution can be obtained with a computer controlled sample stage, and polarizers and analyzers allow user to take polarized spectra.
  • Can measure fluorescence maps using the Olympus optical microscope installed on the instrument.
  • Connection with the MultiRAM to measure spectra with excitation wavelength of 1064 nm.

MicroCT

Bruker High Resolution Micro-Computed Tomography (microCT): Skysan1172

MicroCT scan

MicroCT samples

NOTE: This equipment has been moved to The Centre for Bone and Periodontal Research. Please contact yongjun.xiao [at] affiliate.mcgill.ca for any information about the equipment.

SEM

Tescan VEGA 3 XMH

SEM in clean room

Specifications:

  • High vacuum chamber
  • Accelerating voltage: 200V – 30KV
  • Best resolution: 2nm at 30kV

Applcations:

  • This SEM is for imaging and characterization of the samples

Ellipsometer

Spora GES-5E

Ellipsometer

Specifications:

  • All measurements are made automatically as a function of: wavelength, angle of incidence, polarization state and time.
  • Standard spectral range is 230-900 nm

Applications:

  • GES5E Optical Platform allows various measurement modes from Standard Ellipsometry to generalized Ellipsometry going thru photometric measurements (in Transmission and Reflection), Scatterometry, luminescence measurements.

Optical Profiler

Wyto NT8000

optical profiler

Specifications:

  • Optical profiler, with 8mm scan length
  • 5x and 50x objectives
  • 8" programmable stage
  • LED illumination system

Optical Microscope

Olympus MX51

optical microscope image in cleanroom

Specification and Application:

  • Sample inspection, 5x, 10x, 20x, 50x

Reflectometer

Filmetrix F10-RT

image reflectometer

Specifications:

  • Thickness range:15nm-70um
  • Wavelength range: 380-1050nm

Profilometer

Ambios XP200

Profilometer

Specifications:

  • Height range upto 800um
  • Scan length upto 55mm support 200mm wafer with vacuum.

Applications:

  • A stylus scans the sample surface at a programmable speed, while its position is sampled at small and regular intervals.
  • The data is logged and then processed by the application software to extract useful information such as step height, surface roughness and waviness.

Stress Measurement

Flexus 5200

Stress measurement

Specifications and Applications:

  • The Flexus 5200 Film stress meter system calculates film stresses.
  • It optically measures a wafer curvature radius with and without the deposited film; knowing the wafer thickness, the film thickness and the wafer modulus, Stoney's equation yields the film stress.
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