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ECSE 432 Physical Basis: Transistor Devices (3 credits)

Offered by: Electrical & Computer Engr (Faculty of Engineering)

Overview

Electrical Engineering : Quantitative analysis of diodes and transistors. Semiconductor fundamentals, equilibrium and non-equilibrium carrier transport, and Fermi levels. PN junction diodes, the ideal diode, and diode switching. Bipolar Junction Transistors (BJT), physics of the ideal BJT, the Ebers-Moll model. Field effect transistors, metal-oxide semiconductor structures, static and dynamic behaviour, small-signal models.

Terms: Winter 2014

Instructors: Ishiang Shih (Winter)

  • (3-0-6)
  • Prerequisites: ECSE 212 or MIME 262, ECSE 330, ECSE 351