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ECSE 485 IC Fabrication Laboratory (2 credits)

Offered by: Electrical & Computer Engr (Faculty of Engineering)


Electrical Engineering : Essential processes for silicon semiconductor device fabrication: etching, diffusion, photolithography. Fabrication of large area PN junctions, selective area PN junctions and MOSFETs. Design and fabrication of simple MOS circuits. Electrical characterization of devices and circuits.

Terms: Winter 2013

Instructors: Ishiang Shih (Winter)

  • (1-3-2)
  • Prerequisites: CCOM 206 or EDEC 206, ECSE 334
  • Corequisite: ECSE 432 or ECSE 533
  • Limited Enrolment - 12
  • Lab hours assigned by instructor.